The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Jan. 14, 2003
Takeshi Kumagai, Tokyo, JP;
Hitoshi Katoh, Tokyo, JP;
Jinsu Lee, Tokyo, JP;
Shingo Maku, Tokyo, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A CVD apparatus () forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber () to accommodate a target substrate (W), a support member () to support the target substrate in the process chamber, a heater () to heat the target substrate supported by the support member, an exhaust section () to vacuum-exhaust the process chamber, and a supply section () to supply a gas into the process chamber. The supply section includes a first circuit () to supply a first gas of a silane family gas, a second circuit () to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit () to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.