The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Feb. 09, 2004
Yuji Harada, Niigata-ken, JP;
Jun Hatakeyama, Niigata-ken, JP;
Yoshio Kawai, Niigata-ken, JP;
Masaru Sasago, Hirakata, JP;
Masayuki Endo, Kishiwada, JP;
Shinji Kishimura, Itami, JP;
Kazuhiko Maeda, Tokyo, JP;
Haruhiko Komoriya, Kawagoe, JP;
Satoru Miyazawa, Kawagoe, JP;
Yuji Harada, Niigata-ken, JP;
Jun Hatakeyama, Niigata-ken, JP;
Yoshio Kawai, Niigata-ken, JP;
Masaru Sasago, Hirakata, JP;
Masayuki Endo, Kishiwada, JP;
Shinji Kishimura, Itami, JP;
Kazuhiko Maeda, Tokyo, JP;
Haruhiko Komoriya, Kawagoe, JP;
Satoru Miyazawa, Kawagoe, JP;
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Central Glass Co., Ltd., Ube, JP;
Abstract
A polymer comprising recurring units of (1a) or (1b) wherein Ris an acid labile group, adhesive group or fluoroalkyl, Ris H, F, alkyl or fluoroalkyl, Rand Reach are a single bond, alkylene or fluoroalkylene, Ris H or an acid labile group, 'a' is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000–500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.