The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2006
Filed:
Apr. 26, 2004
Chung-long Chang, Douliou, TW;
Jui-cheng Lo, Hsinchu, TW;
Shang-ting Tsai, Hsin-Chu, TW;
Yu-liang Lin, Hsin-Chu, TW;
Chung-Long Chang, Douliou, TW;
Jui-Cheng Lo, Hsinchu, TW;
Shang-Ting Tsai, Hsin-Chu, TW;
Yu-Liang Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of unblinding an alignment mark comprising the following steps. A substrate having a cell area and an alignment mark within an alignment area is provided. An STI trench is formed into the substrate within the cell area. A silicon oxide layer is formed over the substrate, filling the STI trench and the alignment mark. The silicon oxide layer is planarized to form a planarized STI within the STI trench and leaving silicon oxide within the alignment mark to form a blinded alignment mark. A wet chemical etchant is applied within the alignment mark area over the blinded alignment mark to at least partially remove the silicon oxide within the alignment mark. The remaining silicon oxide is removed from within the blinded alignment mark to unblind the alignment mark. A drop etcher apparatus is also disclosed.