The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Aug. 28, 2002
Yutaka Ohmoto, Hikari, JP;
Ryouji Fukuyama, Kudamatsu, JP;
Mamoru Yakushiji, Kudamatsu, JP;
Michinobu Mizumura, Kudamatsu, JP;
Yutaka Ohmoto, Hikari, JP;
Ryouji Fukuyama, Kudamatsu, JP;
Mamoru Yakushiji, Kudamatsu, JP;
Michinobu Mizumura, Kudamatsu, JP;
Hitachi High-Technologies Corporation, Tokyo, JP;
Abstract
An etching processing method capable of etching a low dielectric constant layer at a reduced cost by using an etching processing apparatus comprising a vacuum vessel, a sample loading electrode disposed in the vacuum vessel, a gas introduction device for introducing a reaction gas into the vacuum vessel, an antenna for forming plasmas in the vacuum vessel, and a high frequency power supply for supplying a bias power to a sample loaded on the sample loading electrode, wherein the bias power to be supplied to the sample is 3 W/cmor less, and the gas introduction device introduces a gas containing chlorine atoms or bromine atoms to apply etching processing to an inorganic insulation material of low dielectric constant loaded on the loading electrode.