The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Dec. 02, 2004
Boon-yong Ang, Cupertino, CA (US);
Cinti Xiaohua Chen, Fremont, CA (US);
Simon S. Chan, Saratoga, CA (US);
Inkuk Kang, San Jose, CA (US);
Boon-Yong Ang, Cupertino, CA (US);
Cinti Xiaohua Chen, Fremont, CA (US);
Simon S. Chan, Saratoga, CA (US);
Inkuk Kang, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a method comprises a step of etching a trench in an ILD layer, said trench having sidewalls and a bottom surface. The method further comprises determining a height of the sidewalls of the trench. The method further comprises filling the trench with interconnect metal such the interconnect metal extends above the trench. According to this exemplary embodiment, the method further comprises performing a CMP process to remove a portion of the interconnect metal. In the present invention, the height of the sidewalls of the trench is utilized to control an amount of polishing performed in the CMP process. The remaining portion of interconnect metal in the trench forms an interconnect line, where the thickness of the interconnect line is controlled by utilizing the height of the sidewalls of the trench to control the amount of polishing in the CMP process.