The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7122455 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 17, 2006

Filed:

Mar. 01, 2004
Applicants:

Christopher F. Lyons, Fremont, CA (US);

Marina V. Plat, San Jose, CA (US);

Srikanteswara Dakshina-murthy, Wappingers Falls, NY (US);

Scott A. Bell, San Jose, CA (US);

Cyrus E. Tabery, Santa Clara, CA (US);

Inventors:

Christopher F. Lyons, Fremont, CA (US);

Marina V. Plat, San Jose, CA (US);

Srikanteswara Dakshina-Murthy, Wappingers Falls, NY (US);

Scott A. Bell, San Jose, CA (US);

Cyrus E. Tabery, Santa Clara, CA (US);

Assignee:

Advanced Micro Devices, Inc., Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract

For patterning an IC (integrated circuit) material, a rigid organic under-layer is formed over the IC material, and the rigid organic under-layer is patterned to form a rigid organic mask structure. In addition, the rigid organic mask structure is trimmed to lower a critical dimension of the rigid organic mask structure beyond the limitations of traditional BARC mask structures. Any portion of the IC material not under the rigid organic mask structure is etched away to form an IC structure.


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