The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2006
Filed:
Oct. 27, 2003
Applicants:
Manchao Xiao, San Diego, CA (US);
Arthur Kenneth Hochberg, Solana Beach, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Inventors:
Manchao Xiao, San Diego, CA (US);
Arthur Kenneth Hochberg, Solana Beach, CA (US);
Kirk Scott Cuthill, Vista, CA (US);
Assignee:
Air Products and Chemicals, Inc., Allentown, PA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C23C 16/40 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
Abstract
Processes for precursors for silicon dielectric depositions of silicon nitride, silicon oxide and silicon oxynitride on a substrate using a hydrazinosilane of the formula:[RN—NH]Si(R)where each Ris independently selected from alkyl groups of Cto C; each Ris independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1–4. Some of the hydrazinosilanes are novel precursors.
Published as:
EP1441042A1; US2004146644A1; KR20040067950A; TW200413560A; CN1518076A; JP2004228585A; TWI248472B; US7122222B2; KR100654279B1; US2007004931A1; JP3954577B2; US7288145B2;