The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2006

Filed:

Mar. 31, 2004
Applicants:

David Johnson, Palm Harbor, FL (US);

Shouliang Lai, Tampa, FL (US);

Russell Westerman, Largo, FL (US);

Inventors:

David Johnson, Palm Harbor, FL (US);

Shouliang Lai, Tampa, FL (US);

Russell Westerman, Largo, FL (US);

Assignee:

Unaxis USA, Inc., St. Petersburg, FL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/302 (2006.01); G05D 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides a method for controlling pressure in a vacuum chamber during a time division multiplexed process. A throttle valve is pre-positioned and held for a predetermined period of time. A process gas is introduced into the vacuum chamber during the associated plasma step (deposition or etching) of the silicon wafer. At the end of the predetermined period of time, the process gas continues to flow with the throttle valve being released from the set position. At this point, the throttle valve is regulated through a proportional derivative and integral control for a period that lasts the remaining time of the associated plasma step.


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