The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2006
Filed:
Oct. 15, 2003
Applicant:
Tomoyo Yamaguchi, Goshogawara, JP;
Inventor:
Tomoyo Yamaguchi, Goshogawara, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for plasma treatment etches an SiC layer with an increased etching rate and enhanced selectivities of SiC with respect to SiOand an organic layer. An etching gas is converted into plasma to etch SiC. The etching gas may include CHF; CHFand N, for example, a mixed gas of CHF, Nand Ar; or a material having C, H and F and a material having N but without any material having O.