The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2006

Filed:

Nov. 08, 2002
Applicants:

Yun Chi, Hsinchu, TW;

Yao-lun Chen, Hsinchu, TW;

Chao-shiuan Liu, Taipei, TW;

Yi-hwa Song, Taichung, TW;

Ying-hui Lai, Nantou, TW;

Arthur J. Carty, Ottawa, CA;

Inventors:

Yun Chi, Hsinchu, TW;

Yao-Lun Chen, Hsinchu, TW;

Chao-Shiuan Liu, Taipei, TW;

Yi-Hwa Song, Taichung, TW;

Ying-Hui Lai, Nantou, TW;

Arthur J. Carty, Ottawa, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C07F 15/00 (2006.01); C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A series of noble metal organometallic complexes of the general formula (I): MLX(FBC), wherein M is a noble metal such as iridium, ruthenium or osmium, and L is a neutral ligand such as carbonyl, alkene or diene; X is an anionic ligand such as chloride, bromide, iodide and trifluoroacetate group; and FBC is a fluorinated bidentate chelate ligand such as beta diketonate, beta-ketoiminate, amino-alcoholate and amino-alcoholate ligand, wherein a is an integer of from zero (0) to three (3), b is an integer of from zero (0) to one (1) and c is an 10 integer of from one (1) to three (3). The resulting noble metal complexes possess enhanced volatility and thermal stability characteristics, and are suitable for chemical vapor deposition(CVD) applications. The corresponding noble metal complex is formed by treatment of the FBC ligand with a less volatile metal halide. Also disclosed are CVD methods for using the noble metal complexes as source reagents for deposition of noble metal-containing films such as Ir, Ru and Os, or even metal oxide film materials IrO, OsOand RuO.


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