The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Aug. 26, 2003
Takanori Mimura, Nirasaki, JP;
Kazuya Nagaseki, Nirasaki, JP;
Kenji Yamamoto, Nirasaki, JP;
Katsumi Horiguchi, Nirasaki, JP;
Yahui Huang, Nirasaki, JP;
Takanori Mimura, Nirasaki, JP;
Kazuya Nagaseki, Nirasaki, JP;
Kenji Yamamoto, Nirasaki, JP;
Katsumi Horiguchi, Nirasaki, JP;
Yahui Huang, Nirasaki, JP;
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SFgas, or fluorocarbon gas, Ogas and fluorosilicon gas, such as SiFgas is supplied into the processing vessel. RF power of 40 MHz or above is applied to the mixed etching gas to generate a plasma. The Si wafer is etched with radicals and ions contained in the plasma.