The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Nov. 12, 2004
Applicants:
Thorsten Kammler, Ottendorf-Okrilla, DE;
Katja Huy, Dresden, DE;
Markus Lenski, Dresden, DE;
Inventors:
Assignee:
Advanced Micro Devices, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a technique that enables the formation of a recessed spacer element by using an anisotropically deposited etch stop layer. Accordingly, in subsequent cleaning processes, material residues of the etch stop layer may be efficiently removed from upper sidewall portions of a line element, thereby increasing the available area for a diffusion path in a subsequent silicidation process. The anisotropic deposition of the etch stop layer may be accomplished by high density plasma enhanced CVD or by directional sputter techniques.