The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Dec. 13, 2001
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Alexander S. Borovik, Hartford, CT (US);
Ziyun Wang, New Milford, CT (US);
James T. Y. Lin, Austin, TX (US);
Scott Battle, Cedar Park, TX (US);
Ravi K. Laxman, San Jose, CA (US);
Chongying Xu, New Milford, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Alexander S. Borovik, Hartford, CT (US);
Ziyun Wang, New Milford, CT (US);
James T. Y. Lin, Austin, TX (US);
Scott Battle, Cedar Park, TX (US);
Ravi K. Laxman, San Jose, CA (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films having dielectric constants of less than 3.0, more preferably 2.8 to 2.0.