The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2006
Filed:
Apr. 01, 2005
Naoya Watanabe, Chiba, JP;
Osamu Takaoka, Chiba, JP;
Naoya Watanabe, Chiba, JP;
Osamu Takaoka, Chiba, JP;
SII NanoTechnology Inc., , JP;
Abstract
There is provided a device in which a probe can be used for both of observation and correction, and which can, even if a next generation photomask of ultra minute structure is made an object, perform a desired processing without injuring a normal portion in a process of obtaining information of a position and a shape of a defect part, and without impairing the probe also at a processing time. It has been adapted such that, at an observation time, a contact pressure between a probe and a mask is reduced to 0.1 nN by applying a vibration of 1 kHz to 1 MHz to the probe. It has been adapted such that a cantilever used in the present invention is formed by a silicon material of 100–600 μm in length and 5–50 μm in thickness and, at the observation time, the probe contacts with the mask at the contact pressure of 0.1 nN and, at the processing time, a defect correction can be performed by causing the probe to contact with the mask at the contact pressure of 10 nN to 1 mN.