The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Jul. 16, 2001
Fang-cheng Chang, Sunnyvale, CA (US);
Yao-ting Wang, Sunnyvale, CA (US);
Yagyensh C. Pati, Woodside, CA (US);
Linard Karklin, Sunnyvale, CA (US);
Fang-Cheng Chang, Sunnyvale, CA (US);
Yao-Ting Wang, Sunnyvale, CA (US);
Yagyensh C. Pati, Woodside, CA (US);
Linard Karklin, Sunnyvale, CA (US);
Synopsys, Inc., Mountain View, CA (US);
Abstract
A system and method of analyzing defects on a mask used in lithography are provided. A defect area image is provided as a first input, a set of lithography parameters is provided as a second input, and a set of metrology data is provided as a third input. The defect area image comprises an image of a portion of the mask. A simulated image can be generated in response to the first input. The simulated image comprises a simulation of an image that would be printed on a wafer if the wafer were exposed to a radiation source directed at the portion of the mask. The characteristics of the radiation source comprise the set of lithography parameters and the characteristics of the mask comprise the set of metrology data.