The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Sep. 30, 2003
Keitaro Imai, Yokohama, JP;
Koji Yamakawa, Tokyo, JP;
Hiroshi Itokawa, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Osamu Arisumi, Yokohama, JP;
Keisuke Nakazawa, Tokyo, JP;
Bum-ki Moon, Hopewell Junction, NY (US);
Keitaro Imai, Yokohama, JP;
Koji Yamakawa, Tokyo, JP;
Hiroshi Itokawa, Yokohama, JP;
Katsuaki Natori, Yokohama, JP;
Osamu Arisumi, Yokohama, JP;
Keisuke Nakazawa, Tokyo, JP;
Bum-ki Moon, Hopewell Junction, NY (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Infineon Technologies, AG, Munich, DE;
Abstract
There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.