The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Mar. 04, 2004
Bruce B. Doris, Brewster, NY (US);
John Charles Petrus, Stanfordville, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
Bruce B. Doris, Brewster, NY (US);
John Charles Petrus, Stanfordville, NY (US);
Ying Zhang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a transistor comprises disposing a planar platform (or pedestal, or layer) of silicon atop a support structure of oxide which is atop a substrate; forming gate structures both atop and beneath the planar platform; and forming source and drain diffusions within the planar platform. The gate structures which are formed beneath the planar platform may smaller than the planar platform, and may be aligned with the gate structures which are formed atop the planar platform. A transistor formed by the method is also disclosed.