The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
May. 01, 2003
Benjamin Szu-min Lin, Hsinchu, TW;
Benjamin Szu-Min Lin, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
An invention of lithography process using an improved reflection mask is provided for extreme ultraviolet (EUV) lithography. In the process an incident EUV is transmitted onto the reflection mask at a grazing incident angle. Therefore a reflected EUV develops a pattern image to a photo resist layer on the surface of the wafer, wherein the shape of the pattern image is dependent on the shape of a plurality of reflective regions on the surface of the reflection mask. Specially, the improved reflection mask is more easily fabricated. The surface roughness and the defects of the reflection mask are also more easily controlled. The improved EUV lithography process is more efficient and cheap.