Projection optical system adjustment method, prediction method, evaluation method, adjustment method, exposure method and exposure apparatus, program, and device manufacturing method

Abstract

Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (stepsto). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (stepsto). And, according to a value of the 12term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9term (a low order spherical aberration term) is controlled (stepsto).