The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
May. 26, 2005
Vladimir V. Talanov, Ellicott City, MD (US);
Andrew R. Schwartz, Bethesda, MD (US);
Vladimir V. Talanov, Ellicott City, MD (US);
Andrew R. Schwartz, Bethesda, MD (US);
Neocera, Inc., Beltsville, MD (US);
Abstract
A method and system for non-contact measurements of microwave capacitance of miniature structures patterned on wafers used for production of modern integrated circuits. A near-field balanced two-conductor probe is brought into close proximity to a test key built on a wafer of interest and replicating the miniature structure of interest. The resonant frequency of the probe for the test key is measured. The probe is then positioned at the same distance from an 'open' calibration key and 'short' calibration key, and the resonance frequencies of the probe for the calibration keys are measured. A shear force distance control mechanism maintains the distance between the tip of the probe and the measured test key and calibration keys. The microwave capacitance of the test key is then calculated in accordance with a predefined formula. The obtained microwave capacitance of the test key is indicative of the capacitance of the miniature structure of interest and may be further used for determining possible defects of the integrated circuit of interest.