The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7102358 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 05, 2006

Filed:

Jun. 29, 2004
Applicants:

Ali Keshavarzi, Portland, OR (US);

Fabrice Paillet, Hillsboro, OR (US);

Muhammad M Khellah, Tigard, OR (US);

Dinesh Somasekhar, Portland, OR (US);

Yibin YE, Portland, OR (US);

Stephen H Tang, Pleasanton, CA (US);

Mohsen Alavi, Portland, OR (US);

Vivek K DE, Beaverton, OR (US);

Inventors:

Ali Keshavarzi, Portland, OR (US);

Fabrice Paillet, Hillsboro, OR (US);

Muhammad M Khellah, Tigard, OR (US);

Dinesh Somasekhar, Portland, OR (US);

Yibin Ye, Portland, OR (US);

Stephen H Tang, Pleasanton, CA (US);

Mohsen Alavi, Portland, OR (US);

Vivek K De, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transistor may have degraded characteristics because of an overvoltage condition. The degraded characteristics may be sensed to determine that the transistor has previously been subjected to an overvoltage condition.


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