The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Jan. 29, 2004
Sadayuki Ohnishi, Kanagawa, JP;
Kouichi Ohto, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Noboru Morita, Kanagawa, JP;
Kouji Arita, Kanagawa, JP;
Ryouhei Kitao, Kanagawa, JP;
Youichi Sasaki, Kanagawa, JP;
Sadayuki Ohnishi, Kanagawa, JP;
Kouichi Ohto, Kanagawa, JP;
Tatsuya Usami, Kanagawa, JP;
Noboru Morita, Kanagawa, JP;
Kouji Arita, Kanagawa, JP;
Ryouhei Kitao, Kanagawa, JP;
Youichi Sasaki, Kanagawa, JP;
NEC Electronics Corporation, Kawasaki, JP;
Abstract
An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm−1) to Si—CH3 bond (1270 cm−1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.