The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
May. 30, 2003
Applicants:
Jingyan Zhang, Boise, ID (US);
Er-xuan Ping, Meridian, ID (US);
Inventors:
Jingyan Zhang, Boise, ID (US);
Er-Xuan Ping, Meridian, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/16 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods of cleaning substrates and growing epitaxial silicon thereon are provided. Wafers are exposed to a plasma for a sufficient time prior to epitaxial silicon growth, in order to clean the wafers. The methods exhibit enhanced selectivity and reduced lateral growth of epitaxial silicon. The wafers may have dielectric areas that are passivated by the exposure of the wafer to a plasma.
Zhang, Jingyan. (2006). Methods for epitaxial silicon growth (U.S. Patent No. 7101435). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7101435
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile