The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Apr. 02, 2003
Takao Arase, Kudamatsu, JP;
Motohiko Yoshigai, Hikari, JP;
Go Saito, Hikari, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Hiroaki Ishimura, Kudamatsu, JP;
Takahiro Shimomura, Kudamatsu, JP;
Takao Arase, Kudamatsu, JP;
Motohiko Yoshigai, Hikari, JP;
Go Saito, Hikari, JP;
Masamichi Sakaguchi, Kudamatsu, JP;
Hiroaki Ishimura, Kudamatsu, JP;
Takahiro Shimomura, Kudamatsu, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.