The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Aug. 29, 2003
Wu Hung Ko, Kaohsiung, TW;
Tung Yaw Kang, Taipei, TW;
Chih Wei Wen, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present invention relates to a method for removing etching assist gas from a fabrication system used during defect repair of a photomask in the fabrication of an integrated circuit, including: (a) inspecting the photomask and detecting a defect, the defect in a defect region; and (b) repairing the defect, wherein an amount, effective for the purpose of styrene is added to the system. By the method of the present invention, the amount of gas remaining on the MOS film is reduced, resulting in less surface defects present on the photomask.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile