The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Jun. 22, 2004
Ron Rulkens, Milpitas, CA (US);
Dennis M. Hausmann, Los Gatos, CA (US);
Raihan M. Tarafdar, San Jose, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
Bunsen Nie, Fremont, CA (US);
Adrianne K. Tipton, Fremont, CA (US);
Jeff Tobin, Mountain View, CA (US);
Ron Rulkens, Milpitas, CA (US);
Dennis M. Hausmann, Los Gatos, CA (US);
Raihan M. Tarafdar, San Jose, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
Bunsen Nie, Fremont, CA (US);
Adrianne K. Tipton, Fremont, CA (US);
Jeff Tobin, Mountain View, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal-containing precursor on the substrate surface; and exposing the substrate surface to a mixed alkoxy-substituted silicon-containing precursor gas to form the dielectric film.