The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Sep. 03, 2004
Eric N. Paton, Morgan Hill, CA (US);
Qi Xiang, San Jose, CA (US);
Cyrus E. Tabery, Santa Clara, CA (US);
Bin Yu, Cupertino, CA (US);
Robert B. Ogle, San Jose, CA (US);
Eric N. Paton, Morgan Hill, CA (US);
Qi Xiang, San Jose, CA (US);
Cyrus E. Tabery, Santa Clara, CA (US);
Bin Yu, Cupertino, CA (US);
Robert B. Ogle, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of fabricating a semiconductor device comprises forming a gate electrode over a substrate and forming deep amorphous regions within the substrate. And implanting dopants to form deep source/drain regions at a depth less than that of the deep amorphous regions, partially re-crystallizing portions of the deep amorphous regions to reduce their depth, and re-crystallizing the reduced amorphous regions to form activated final source/drain regions.