The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2006

Filed:

Jun. 22, 2004
Applicants:

Kangguo Cheng, Beacon, NY (US);

Johnathan E. Faltermeier, LaGrangeville, NY (US);

David R. Hanson, Brewster, NY (US);

Carl J. Radens, LaGrangeville, NY (US);

Inventors:

Kangguo Cheng, Beacon, NY (US);

Johnathan E. Faltermeier, LaGrangeville, NY (US);

David R. Hanson, Brewster, NY (US);

Carl J. Radens, LaGrangeville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A microelectronic element is provided having a major surface, the microelectronic element including a first capacitor formed on a sidewall of a first trench, the first trench being elongated in a downwardly extending direction from the major surface. The microelectronic element further includes a second capacitor formed on a sidewall of a second trench, the second trench being elongated in a downwardly extending direction from the major surface, wherein a top of the first capacitor is disposed at a first depth from the major surface, and a top of the second capacitor is disposed at a second depth from the major surface.


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