The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Oct. 22, 2001
Satoshi Tobe, Annaka, JP;
Ken Aihara, Annaka, JP;
Satoshi Tobe, Annaka, JP;
Ken Aihara, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
There are provided a heat-treating method capable of both increasing BMD density and widening DZ layer width, and a silicon wafer having DZ layer width wider compared with a conventional one regardless of high BMD density. In the method, heat treatment (RTA treatment) is performed to a silicon wafer containing interstitial oxygen with a rapid heating-rapid cooling apparatus, thereby atomic vacancies being injected from a surface of the wafer to form a maximum position of an atomic vacancy concentration in a depth direction in the vicinity of the surface of the wafer, and thereafter heat treatment (post annealing) is performed to move the maximum position of the atomic vacancy concentration in the vicinity of the surface of the wafer into the inside of the wafer.