The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2006

Filed:

Sep. 30, 2003
Applicants:

Timothy S. Campbell, Gotha, FL (US);

Daniel P. Chesire, Winter Garden, FL (US);

Kelly Hinckley, Orlando, FL (US);

Gregory A. Head, Orlando, FL (US);

Benu B. Patel, Orlando, FL (US);

Inventors:

Timothy S. Campbell, Gotha, FL (US);

Daniel P. Chesire, Winter Garden, FL (US);

Kelly Hinckley, Orlando, FL (US);

Gregory A. Head, Orlando, FL (US);

Benu B. Patel, Orlando, FL (US);

Assignee:

Agere Systems Inc., Allentown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A process for etching a sacrificial layer of a structure. The structure is exposed to a plasma derived from nitrogen trifluoride for etching the sacrificial layer. The process is selective in that it etches titanium-nitride and titanium but does not affect adjacent silicon dioxide or aluminum layers. Applications of the process include the formation of integrated circuit structures and MEMS structures.


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