The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 02, 2003
Siswanto Sutanto, San Jose, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Waikit Fung, Cupertino, CA (US);
Mayasari Lim, Union CIty, CA (US);
Vishal Gauri, San Jose, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
Siswanto Sutanto, San Jose, CA (US);
Wenxian Zhu, Palo Alto, CA (US);
Waikit Fung, Cupertino, CA (US);
Mayasari Lim, Union CIty, CA (US);
Vishal Gauri, San Jose, CA (US);
George D. Papasouliotis, Cupertino, CA (US);
Novellus Systems, Inc., San Jose, CA (US);
Abstract
Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6:1, and up to 10:1 or higher), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps while reducing or eliminating chamber loading and redeposition and improving wafer-to-wafer uniformity relative to conventional deposition-etch-deposition processes which do not incorporate hydrogen in their etch chemistries.