The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Sep. 27, 2003
Evgeni Gousev, Mohopac, NY (US);
Huiling Shang, Yorktown Heights, NY (US);
Christopher P. D'emic, Ossining, NY (US);
Paul M. Kozlowski, Poughkeepsie, NY (US);
Evgeni Gousev, Mohopac, NY (US);
Huiling Shang, Yorktown Heights, NY (US);
Christopher P. D'Emic, Ossining, NY (US);
Paul M. Kozlowski, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for producing thin, below 6 nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well.