The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Feb. 11, 2003
Carlo Waldfried, Falls Church, VA (US);
Qingyuan Han, Columbia, MD (US);
Orlando Escorcia, Falls Church, VA (US);
Ebrahim Andideh, Portland, OR (US);
Carlo Waldfried, Falls Church, VA (US);
Qingyuan Han, Columbia, MD (US);
Orlando Escorcia, Falls Church, VA (US);
Ebrahim Andideh, Portland, OR (US);
Axcelis Technologies, Inc., Beverly, MA (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A low temperature plasma ashing process for use with substrates comprising a ferroelectric material. The process generally includes plasma ashing the photoresist and residues at a temperature of about room temperature to about 140° C., wherein the plasma is generated from a gas mixture consisting essentially of hydrogen and an inert gas, and wherein the ferroelectric material is exposed to the plasma.