The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2006
Filed:
Apr. 23, 2003
Byoung Ha Cho, Daejeon-si, KR;
Yong IL Kim, Chuncheongnam-do, KR;
Cheol Ho Shin, Chuncheongnam-do, KR;
Won Hyung Lee, Chungcheongnam-do, KR;
Jung Soo Kim, Chungcheongnam-do, KR;
Sang Tae Sim, Chuncheongbuk-do, KR;
Byoung Ha Cho, Daejeon-si, KR;
Yong Il Kim, Chuncheongnam-do, KR;
Cheol Ho Shin, Chuncheongnam-do, KR;
Won Hyung Lee, Chungcheongnam-do, KR;
Jung Soo Kim, Chungcheongnam-do, KR;
Sang Tae Sim, Chuncheongbuk-do, KR;
Abstract
The present invention relates to a method for forming silicon oxide films on substrates using an atomic layer deposition process. Specifically, the silicon oxide films are formed at low temperature and high deposition rate via the atomic layer deposition process using a SiClsource unlike a conventional atomic layer deposition process using a SiClsource. The atomic layer deposition apparatus used in the above process can be in-situ cleaned effectively at low temperature using a HF gas or a mixture gas of HF gas and gas containing —OH group.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile