The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Aug. 17, 2004
Applicants:
Paolo Fiorini, Brussels, BE;
Sherif Sedky, Dokki Giza, EG;
Matty Caymax, Leuven, BE;
Christiaan Baert, Heverlee, BE;
Inventors:
Paolo Fiorini, Brussels, BE;
Sherif Sedky, Dokki Giza, EG;
Matty Caymax, Leuven, BE;
Christiaan Baert, Heverlee, BE;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of controlling an internal stress in a polycrystalline silicon-germanium layer deposited on a substrate. The method includes selecting a deposition pressure that is at or below atmospheric pressure and selecting a deposition temperature that is no greater than 700° C. The deposition pressure and the deposition temperature are selected so as to achieve an internal stress in the silicon-germanium layer that is within a predetermined range.