The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Apr. 03, 2003
Sung-hsiung Wang, Kaohsiung, TW;
Sung-Hsiung Wang, Kaohsiung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin Chu, TW;
Abstract
A method for forming a void free ultra thick dual damascene copper feature providing a semiconductor process wafer comprising via openings formed in a first undoped silicate glass (USG) layer the first USG layer having an overlying a second USG layer formed having a thickness of greater than about 1 micron and an overlying silicon oxynitride BARC layer; forming a trench opening having a width of greater than about 1 micron to encompass one of the via openings; forming a barrier layer to line the dual damascene opening; forming a copper seed layer having a thickness of from about 1000 Angstroms to about 2000 Angstroms; carrying out a multi-step electrochemical deposition (ECD); and, carrying out a two step copper annealing process.