The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Sep. 28, 2005
Applicants:
Anthony J. Lochtefeld, Somerville, MA (US);
Dimitri Antoniadis, Newton, MA (US);
Matthew T. Currie, Brookline, MA (US);
Inventors:
Anthony J. Lochtefeld, Somerville, MA (US);
Dimitri Antoniadis, Newton, MA (US);
Matthew T. Currie, Brookline, MA (US);
Assignee:
AmberWave Systems Corporation, Salem, NH (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract
In forming an electronic device, a semiconductor layer is pre-doped and a dopant distribution anneal is performed prior to gate definition. Alternatively, the gate is formed from a metal. Subsequently formed shallow sources and drains, therefore, are not affected by the gate annealing step.
Lochtefeld, Anthony. (2006). Gate material for semiconductor device fabrication (U.S. Patent No. 7074655). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7074655
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile