The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2006
Filed:
Mar. 21, 2002
Takaharu Kondo, Kyoto, JP;
Shotaro Okabe, Nara, JP;
Koichiro Moriyama, Kyoto, JP;
Takahiro Yajima, Kyoto, JP;
Takeshi Shishido, Nara, JP;
Takaharu Kondo, Kyoto, JP;
Shotaro Okabe, Nara, JP;
Koichiro Moriyama, Kyoto, JP;
Takahiro Yajima, Kyoto, JP;
Takeshi Shishido, Nara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.