The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2006

Filed:

Dec. 10, 2004
Applicants:

Hidehiko Shiraiwa, San Jose, CA (US);

Harpreet K. Sachar, Milpitas, CA (US);

Mark Randolph, San Jose, CA (US);

Wei Zheng, Santa Clara, CA (US);

Inventors:

Hidehiko Shiraiwa, San Jose, CA (US);

Harpreet K. Sachar, Milpitas, CA (US);

Mark Randolph, San Jose, CA (US);

Wei Zheng, Santa Clara, CA (US);

Assignee:

Spansion,LLC, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a substrate that further includes source, drain and channel regions. The device may further include a bottom oxide layer formed upon the substrate, a charge storage layer formed upon the bottom oxide layer, and a steam oxide layer thermally grown upon the charge storage layer. The device may also include an alumina oxide layer formed upon the steam oxide layer and a gate electrode formed upon the alumina oxide layer.


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