The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2006
Filed:
May. 21, 2004
Kuo-chun Wu, San Jose, CA (US);
Wee-chen Richard Gan, Santa Clara, CA (US);
Karen Wong, Milpitas, CA (US);
Kuo-Chun Wu, San Jose, CA (US);
Wee-chen Richard Gan, Santa Clara, CA (US);
Karen Wong, Milpitas, CA (US);
Mosel Vitelic, Inc., Hsin Chu, TW;
Abstract
A chemical mechanical polishing (CMP) method is disclosed in which a new polishing pad is broken-in and conditioned into a steady operating state while using a silica (SiO) based CMP slurry and where the broken-in and conditioned pad is afterwards used for polishing patterned workpieces (e.g., semiconductor wafers) with a ceria (CeO) based CMP slurry. The approach shortens break-in time and appears to eliminate a first wafer effect usually seen following break-in with ceria-based CMP slurries.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile