The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2006
Filed:
Apr. 27, 2004
Applicants:
Katsuhisa Yuda, Tokyo, JP;
GE Xu, Tokyo, JP;
Inventors:
Katsuhisa Yuda, Tokyo, JP;
Ge Xu, Tokyo, JP;
Assignees:
NEC Corp., Tokyo, JP;
ANELVA Corp., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of forming a silicon oxide film, the silicon oxide film is formed on a substrate by the use of a plasma CVD method. A plasma-generating region is separated from a deposition region which includes excitation oxygen molecules and excitation oxygen atoms. Plasma of first gas containing oxygen atoms is formed in the plasma-generating region while second gas containing silicon atoms is supplied into the deposition region. First quantity of the excitation oxygen molecules and second quantity of the excitation oxygen atoms are controlled intentionally.