The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Nov. 12, 2004
John M Aitken, South Burlington, VT (US);
Ethan H. Cannon, Essex Junction, VT (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Alvin W. Strong, Essex Junction, VT (US);
John M Aitken, South Burlington, VT (US);
Ethan H. Cannon, Essex Junction, VT (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Alvin W. Strong, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises a bulk layer, an insulator layer and a device layer. The first heating element is formed within the bulk layer. A first side of the first heating element is adjacent to a first portion of the insulator layer. The first heating element is adapted to be selectively activated to generate thermal energy to heat the first portion of the insulator layer and anneal a trapped electrical charge from the first portion of the insulator layer.