The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Dec. 31, 2003
Kun-ching Chen, Tainan, TW;
Sung-mao Wu, Kaohsiung, TW;
Kun-Ching Chen, Tainan, TW;
Sung-Mao Wu, Kaohsiung, TW;
Advanced Semiconductor Engineering Inc., Kaohsiung, TW;
Abstract
A high frequency substrate includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a high-frequency signal transmission line. The first dielectric layer is formed on the first metal layer, and the second metal layer is formed on the first dielectric layer. The first and second metal layers are maintained in a stable voltage status due to the high dielectric coefficient of the first dielectric layer. Besides, the second dielectric layer is formed on the second metal layer. High speed and high frequency transmission are achieved when signals transmitting in the high-frequency transmission line formed on the second dielectric layer due to the low dielectric coefficient of the second dielectric layer.