The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
May. 18, 2004
Applicants:
Hisatsugu Kurita, Niigata, JP;
Masato Igarashi, Niigata, JP;
Takeshi Senda, Niigata, JP;
Koji Izunome, Niigata, JP;
Inventors:
Hisatsugu Kurita, Niigata, JP;
Masato Igarashi, Niigata, JP;
Takeshi Senda, Niigata, JP;
Koji Izunome, Niigata, JP;
Assignee:
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A manufacturing method for a silicon substrate having a strained layer, has steps of forming a plurality of atomic steps having a height of 0.1 nm or more on the surface of a silicon substrate, forming a plurality of terraces having a width of 0.1 μm or more between the plurality of atomic steps and forming a SiGe layer or a SiGe layer and a Si layer on the silicon substrate.