The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Dec. 16, 2002
Franz Hofmann, München, DE;
Georg Tempel, Sterrebeek, BE;
Robert Strenz, Dresden, DE;
Robert Wiesner, Regensburg, DE;
Franz Hofmann, München, DE;
Georg Tempel, Sterrebeek, BE;
Robert Strenz, Dresden, DE;
Robert Wiesner, Regensburg, DE;
Infineon Technologies AG, Munich, DE;
Abstract
In the course of a method for fabricating a field-effect transistor having a floating gate, a structure is formed which has uncovered sidewalls of a layer made of the material for forming the floating gate and which is exposed to an oxidizing atmosphere in order to coat the sidewalls. At the same time, other regions of the structure have an insulating oxide layer. At a point in time prior to the action of an oxidizing atmosphere, nitrogen is implanted into the material of the floating gate in a quantity that appreciably reduces the oxidation at the sidewalls thereof.