The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Aug. 17, 2004
Chin-tien Yang, Hsinchu, TW;
Juan-jann Jou, Tainan Hsien, TW;
Yu-hua Lee, Hsinchu, TW;
Chia-hung Lai, Hsinchu, TW;
Chin-Tien Yang, Hsinchu, TW;
Juan-Jann Jou, Tainan Hsien, TW;
Yu-Hua Lee, Hsinchu, TW;
Chia-Hung Lai, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Abstract
A method for manufacturing a dual damascene structure, which forms a trench first, is described. The manufacturing method has following steps. First, a substrate with a plurality of semiconductor devices is provided. A first metal layer, a first etching stop layer, a dielectric layer, and a second etching stop layer are subsequently formed thereon. A trench is formed in the dielectric layer at a predetermined depth thereafter, and a sacrificial layer is filled therein and is next planarized. Then a photoresist layer is formed thereon for etching a via. Afterward the photoresist layer and the sacrificial layer are both removed. Following that, the first etching stop layer is etched through to expose the first metal layer. Finally, the via and the trench are filled with a second metal layer.