The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Jun. 03, 2004
Der-shin Shyu, Hsinchu, TW;
Hung-cheng Sung, Hsinchu, TW;
Chen-ming Huang, Taoyuan, TW;
Hsui Ouyang, Taipei, TW;
Der-Shin Shyu, Hsinchu, TW;
Hung-Cheng Sung, Hsinchu, TW;
Chen-Ming Huang, Taoyuan, TW;
Hsui Ouyang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating an embedded flash memory device. A substrate having a memory area is provided. A device is formed on the substrate in the memory area. A conductive layer is formed over the substrate to cover the device in the memory area. A conformal insulating layer is formed on the conductive layer and the substrate. The insulating layer is removed at an edge of the memory area. By anisotropic etching, the insulating layer and part of the conductive layer is removed to form a control gate on the sidewall of the device. Thus, polysilicon residue caused by the conventional control gate process does not occur.