The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2006
Filed:
Jul. 03, 2003
Gaku Sugahara, Nara, JP;
Yoshiaki Hasegawa, Katano, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Gaku Sugahara, Nara, JP;
Yoshiaki Hasegawa, Katano, JP;
Akihiko Ishibashi, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method for fabricating a nitride semiconductor laser device including a step to expose surfaces of an n-type nitride semiconductor layer () and a p-type nitride semiconductor layer (); a step to cover the surface of the multi-layered semiconductor; with an insulating film () that has a thickness greater than the difference in levels between the exposed surface of the n-type nitride semiconductor layer () and the outermost surface of the p-type nitride semiconductor layer (); a step to flatten the surface of the insulating film (); and a step to form an n-type electrode () and a p-type electrode () electrically connected to the n-type nitride semiconductor layer () and the p-type nitride semiconductor layer (), respectively. This method makes it possible to obtain a nitride semiconductor laser device that is highly reliable and exhibits an excellent heat diffusing property.