The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Nov. 15, 2002
Tatsuyuki Saito, Ome, JP;
Naofumi Ohashi, Tsukuba, JP;
Toshinori Imai, Ome, JP;
Junji Noguchi, Hamura, JP;
Tsuyoshi Tamaru, Hachioji, JP;
Tatsuyuki Saito, Ome, JP;
Naofumi Ohashi, Tsukuba, JP;
Toshinori Imai, Ome, JP;
Junji Noguchi, Hamura, JP;
Tsuyoshi Tamaru, Hachioji, JP;
RenesasTechnology Corp., Tokyo, JP;
Abstract
A semiconductor device has first interlayer insulating film having a wiring trench; a wiring portion having a first barrier metal layer formed over side walls and bottom surface of the wiring trench, a first conductor layer formed over the first barrier metal layer to embed the wiring trench, and a capping barrier metal film formed over the first conductor layer; second interlayer insulating film formed over the first interlayer insulating film and having a connecting hole; and a connecting portion having a second barrier metal layer formed over side walls and bottom surface of the connecting hole, and a second conductor layer formed over the second barrier metal layer to embed the connecting hole; wherein, at a joint between the connecting portion and wiring portion, at least one of the second barrier metal layer and capping barrier metal film on the bottom surface of the connecting hole is removed.