The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2006
Filed:
Mar. 24, 2005
Applicants:
John F. Conley, Jr., Camas, WA (US);
Yoshi Ono, Camas, WA (US);
Rajendra Solanki, Portland, OR (US);
Inventors:
John F. Conley, Jr., Camas, WA (US);
Yoshi Ono, Camas, WA (US);
Rajendra Solanki, Portland, OR (US);
Assignee:
Sharp Laboratories of America, Inc., Camas, WA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract
An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide/aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.
Published as:
US2004171280A1; KR20040077565A; JP2004260168A; TW200424348A; US2005170667A1; US6930059B2; US7053009B2; KR100591507B1; TWI276700B; JP4158975B2;